BSR14
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- Mfr.Part #
- BSR14
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.8A SOT23-3
- Stock
- 14,496
- In Stock ：
- 14,496
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 800mA
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2012
- Length :
- 2.92mm
- Power Dissipation :
- 350mW
- Max Breakdown Voltage :
- 40V
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 75V
- Terminal Form :
- Gull wing
- Current Rating :
- 800mA
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Base Part Number :
- BSR14
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- Collector Emitter Saturation Voltage :
- 1V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Weight :
- 30mg
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Factory Lead Time :
- 39 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Turn Off Time-Max (toff) :
- 285ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Width :
- 1.3mm
- hFE Min :
- 35
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 40V
- Terminal Position :
- Dual
- Frequency :
- 300MHz
- Gain Bandwidth Product :
- 300MHz
- Transition Frequency :
- 300MHz
- Max Power Dissipation :
- 350mW
- Height :
- 1.2mm
- Datasheets
- BSR14
BSR14 Documents
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSR14 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 800mA volts.
BSR14 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 800mA
a transition frequency of 300MHz
BSR14 Applications
There are a lot of ON Semiconductor
BSR14 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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