BSR14
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- Mfr.Part #
- BSR14
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.8A SOT23-3
- Stock
- 14,496
- In Stock ：
- 14,496
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 40V
- Max Junction Temperature (Tj) :
- 150°C
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Turn Off Time-Max (toff) :
- 285ns
- Current Rating :
- 800mA
- Number of Terminations :
- 3
- Factory Lead Time :
- 39 Weeks
- Collector Emitter Saturation Voltage :
- 1V
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 300MHz
- Length :
- 2.92mm
- Voltage - Rated DC :
- 40V
- Width :
- 1.3mm
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 350mW
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 40V
- Weight :
- 30mg
- Termination :
- SMD/SMT
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 40V
- Power Dissipation :
- 350mW
- Number of Pins :
- 3
- Published :
- 2012
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Max Collector Current :
- 800mA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 6V
- Height :
- 1.2mm
- Base Part Number :
- BSR14
- Terminal Form :
- Gull wing
- Transition Frequency :
- 300MHz
- hFE Min :
- 35
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 75V
- Frequency :
- 300MHz
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- BSR14
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSR14 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 800mA volts.
BSR14 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 800mA
a transition frequency of 300MHz
BSR14 Applications
There are a lot of ON Semiconductor
BSR14 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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