BSP19TA
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- Mfr.Part #
- BSP19TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A SOT223-3
- Stock
- 14,465
- In Stock ：
- 14,465
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Lead Free :
- Contains Lead
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 5V
- Transition Frequency :
- 70MHz
- Transistor Type :
- NPN
- Number of Terminations :
- 4
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 400V
- Weight :
- 188.014037mg
- JESD-30 Code :
- R-PDSO-G4
- Max Breakdown Voltage :
- 350V
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 500mA
- Base Part Number :
- BSP19
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Gain Bandwidth Product :
- 70MHz
- Package / Case :
- TO-261-4, TO-261AA
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.29.00.75
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Max Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- Published :
- 1999
- Element Configuration :
- Single
- Voltage - Rated DC :
- 350V
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- Unknown
- Datasheets
- BSP19TA
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP19TA Overview
In this device, the DC current gain is 50 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 4mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BSP19TA Features
the DC current gain for this device is 50 @ 100mA 5V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz
BSP19TA Applications
There are a lot of Diodes Incorporated
BSP19TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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