BSP19AT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA 10V

Contact Plating :

Tin

Power Dissipation :

800mW

Collector Emitter Breakdown Voltage :

350V

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

4

Case Connection :

COLLECTOR

Pin Count :

4

Collector Emitter Voltage (VCEO) :

350V

Transistor Type :

NPN

Package / Case :

TO-261-4, TO-261AA

Vce Saturation (Max) @ Ib, Ic :

500mV @ 4mA, 50mA

Voltage - Rated DC :

350V

Transistor Application :

SWITCHING

Frequency :

70MHz

Collector Emitter Saturation Voltage :

500mV

Radiation Hardening :

No

Number of Elements :

1

Current - Collector Cutoff (Max) :

20nA ICBO

Length :

6.7mm

Height :

1.75mm

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Cut Tape (CT)

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Gain Bandwidth Product :

70MHz

Lead Free :

Lead Free

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

350V

Current Rating :

1A

Element Configuration :

Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Pbfree Code :

yes

Base Part Number :

BSP19

hFE Min :

40

Max Collector Current :

100mA

REACH SVHC :

No SVHC

Number of Pins :

4

JESD-609 Code :

e3

Transition Frequency :

70MHz

Published :

2007

Operating Temperature :

-65°C~150°C TJ

Max Power Dissipation :

800mW

Terminal Position :

Dual

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

400V

Width :

3.7mm