BSP16T1G

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Mfr.Part #
BSP16T1G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 300V 0.1A SOT223
Stock
13,857
In Stock :
13,857

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Width :
3.7mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Gain Bandwidth Product :
15MHz
Number of Elements :
1
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
260
hFE Min :
30
Terminal Form :
Gull wing
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
350V
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-65°C~150°C TJ
Element Configuration :
Single
Factory Lead Time :
2 Weeks
Terminal Position :
Dual
Collector Emitter Saturation Voltage :
-2V
Vce Saturation (Max) @ Ib, Ic :
2V @ 5mA, 50mA
JESD-609 Code :
e3
REACH SVHC :
No SVHC
Case Connection :
COLLECTOR
Surface Mount :
yes
Transistor Element Material :
SILICON
Power Dissipation :
1.5W
Time@Peak Reflow Temperature-Max (s) :
40
Number of Terminations :
4
Max Collector Current :
100mA
Pin Count :
4
Max Breakdown Voltage :
40V
Current - Collector Cutoff (Max) :
50μA
Packaging :
Tape and Reel (TR)
Emitter Base Voltage (VEBO) :
6V
Number of Pins :
4
Length :
6.7mm
Radiation Hardening :
No
Mounting Type :
Surface Mount
Polarity/Channel Type :
PNP
Collector Emitter Voltage (VCEO) :
300V
Frequency :
15MHz
ECCN Code :
EAR99
Package / Case :
TO-261-4, TO-261AA
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Voltage - Rated DC :
-300V
Height :
1.75mm
Max Power Dissipation :
1.5W
Transistor Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 10V
Published :
2004
Transition Frequency :
15MHz
Base Part Number :
BSP16
Collector Emitter Breakdown Voltage :
300V
Current Rating :
-1A
Datasheets
BSP16T1G
Introducing Transistors - Bipolar (BJT) - Single onsemi BSP16T1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Number of Terminations:4, Number of Pins:4, Mounting Type:Surface Mount, Package / Case:TO-261-4, TO-261AA, Base Part Number:BSP16, BSP16T1G pinout, BSP16T1G datasheet PDF, BSP16T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BSP16T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BSP16T1G


PNP -65°C~150°C TJ 50μA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

BSP16T1G Overview


DC current gain in this device equals 30 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 15MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 100mA volts.

BSP16T1G Features


the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -1A
a transition frequency of 15MHz


BSP16T1G Applications


There are a lot of ON Semiconductor
BSP16T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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