BSN20,215

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Package :

Bulk

Manufacturer :

Nexperia

Gate to Source Voltage (Vgs) :

20 V

Base Product Number :

BSN2

Rds On Max :

15 Ω

Drain to Source Resistance :

15 Ω

JESD-30 Code :

R-PDSO-G3

Number of Elements :

1

Drain to Source Voltage (Vdss) :

50 V

Threshold Voltage :

1 V

Terminal Position :

Dual

Series :

*

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Max Operating Temperature :

150 °C

Additional Feature :

LOGIC LEVEL COMPATIBLE

DS Breakdown Voltage-Min :

50 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Weight :

4.535924 g

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-65 °C

Height :

1 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

3

Radiation Hardening :

No

Reach Compliance Code :

Compliant

Lead Free :

Lead Free

Product Status :

Active

Max Dual Supply Voltage :

50 V

Length :

3 mm

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

50 V

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Resistance :

15 Ω

Contact Plating :

Tin

ECCN Code :

EAR99

Continuous Drain Current (ID) :

170 mA

JESD-609 Code :

e3

Dual Supply Voltage :

50 V

Input Capacitance :

17 pF

Max Power Dissipation :

830 mW

Drain-source On Resistance-Max :

20 Ω

Power Dissipation :

830 mW

Mount :

Surface Mount

Feedback Cap-Max (Crss) :

8 pF

Terminal Form :

Gull wing

RoHS :

Compliant

Width :

1.4 mm

Surface Mount :

yes

Transistor Element Material :

SILICON

Number of Terminals :

3

Nominal Vgs :

1 V

Element Configuration :

Single