BSH205G2

Manufacturer :

Nexperia

Product Category :

Specialized ICs

DS Breakdown Voltage-Min :

20V

FET Type :

P-Channel

Number of Elements :

1

Fall Time (Typ) :

16 ns

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Vgs(th) (Max) @ Id :

950mV @ 250μA

Turn On Delay Time :

5 ns

Input Capacitance (Ciss) (Max) @ Vds :

418pF @ 10V

Drain-source On Resistance-Max :

0.17Ohm

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

2A

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Rise Time :

14ns

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Vgs (Max) :

±8V

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

43 ns

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

170m Ω @ 2A, 4.5V

Power Dissipation-Max :

480mW Ta

Drain Current-Max (Abs) (ID) :

2A

Mount :

Surface Mount

Published :

2015

Packaging :

Cut Tape (CT)

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V