BSH121,135

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Vgs (Max) :

±8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

75V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

4Ohm

Power Dissipation-Max :

700mW Tc

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

300mA

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Operating Temperature :

-65°C~150°C TJ

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Package / Case :

SC-70, SOT-323

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 8V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Published :

1997

Pin Count :

3

Rds On (Max) @ Id, Vgs :

4 Ω @ 500mA, 4.5V

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Series :

TrenchMOS™

Vgs(th) (Max) @ Id :

1.3V @ 1mA

DS Breakdown Voltage-Min :

55V

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Power Dissipation :

700mW

Feedback Cap-Max (Crss) :

10 pF

Terminal Position :

Dual

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

HTS Code :

8541.29.00.75