BR25L640F-WE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Pbfree Code :

yes

Number of Terminations :

8

Terminal Pitch :

1.27mm

Pin Count :

8

Number of Functions :

1

Factory Lead Time :

11 Weeks

Published :

2012

Write Cycle Time-Max (tWC) :

5ms

Width :

4.4mm

Lead Free :

Lead Free

Memory Size :

64Kb 8K x 8

Data Retention Time-Min :

40

Length :

5mm

Memory Interface :

SPI

Write Cycle Time - Word, Page :

5ms

Density :

64 kb

Serial Bus Type :

SPI

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-40°C~85°C TA

Height Seated (Max) :

1.6mm

Mounting Type :

Surface Mount

Memory Width :

8

Operating Mode :

SYNCHRONOUS

Interface :

SPI, Serial

Terminal Position :

Dual

Supply Current-Max :

0.003mA

Terminal Finish :

TIN COPPER

Mount :

Surface Mount

JESD-609 Code :

e2

Number of Pins :

8

Clock Frequency :

5MHz

Contact Plating :

Copper, Tin

Standby Current-Max :

0.000002A

Base Part Number :

BR25L640

Voltage - Supply :

1.8V~5.5V

Endurance :

1000000 Write/Erase Cycles

ECCN Code :

EAR99

Memory Format :

EEPROM

Operating Supply Voltage :

5V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Memory Type :

Non-Volatile

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Supply Voltage :

2.5V

Qualification Status :

Not Qualified

Write Protection :

Hardware