BR25L080FVT-WE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Write Cycle Time-Max (tWC) :

5ms

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

8

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Functions :

1

Packaging :

Tape and Reel (TR)

Density :

8 kB

Serial Bus Type :

SPI

Pin Count :

8

Endurance :

1000000 Write/Erase Cycles

Height Seated (Max) :

1.25mm

Interface :

SPI, Serial

Operating Mode :

SYNCHRONOUS

Data Retention Time-Min :

40

Qualification Status :

Not Qualified

Clock Frequency :

5MHz

Length :

4.4mm

ECCN Code :

EAR99

Standby Current-Max :

0.000002A

Supply Voltage :

2.5V

Voltage - Supply :

1.8V~5.5V

Operating Supply Voltage :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Pitch :

0.65mm

Memory Interface :

SPI

Base Part Number :

BR25L080

Lead Free :

Lead Free

Write Protection :

Hardware

Write Cycle Time - Word, Page :

5ms

Memory Size :

8Kb 1K x 8

Supply Current-Max :

0.003mA

Width :

3mm

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Operating Temperature :

-40°C~85°C TA

JESD-609 Code :

e2

Memory Format :

EEPROM

Access Time :

5 μs

Memory Type :

Non-Volatile

Mount :

Surface Mount

Number of Pins :

8

Memory Width :

8

Published :

2005

Contact Plating :

Tin

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Pbfree Code :

yes