BLF881S,112

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Product Status :

Active

Output Power (W) :

140(Typ)

ECCN (US) :

EAR99

Maximum Gate Source Voltage (V) :

13

Mounting :

Surface Mount

Maximum Drain Source Voltage (V) :

104

Maximum Drain Source Resistance (mOhm) :

210(Typ)@6.15V

Package :

Bulk

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Package Length :

9.78(Max)

Typical Power Gain (dB) :

21

Terminal Position :

Dual

Channel Type :

N

Typical Output Capacitance @ Vds (pF) :

33.5@50V

Process Technology :

LDMOS

Transistor Application :

AMPLIFIER

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Typical Drain Efficiency (%) :

49

DS Breakdown Voltage-Min :

104 V

Polarity/Channel Type :

N-Channel

Maximum Operating Temperature (°C) :

200

Base Product Number :

BLF88

Mode of Operation :

DVB-T|2-Tone Class-AB

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

SOURCE

Pin Count :

3

Number of Elements :

1

Number of Terminals :

2

Transistor Element Material :

SILICON

PCB changed :

3

Packaging :

Bulk

Typical Reverse Transfer Capacitance @ Vds (pF) :

1@50V

Supplier Package :

LDMOST

Manufacturer :

Ampleon

Configuration :

Single

Maximum Frequency (MHz) :

860

Minimum Frequency (MHz) :

1

Reference Standard :

IEC-60134

Military :

No

HTS :

8541.29.00.95

Factory Lead Time :

26 Weeks

Channel Mode :

Enhancement

Package Height :

4.67(Max)

Series :

*

Number of Elements per Chip :

1

Maximum VSWR :

10

Package Width :

5.92(Max)

Typical Input Capacitance @ Vds (pF) :

100@50V

JESD-30 Code :

R-CDFP-F2

RoHS Status :

RoHS Compliant

Minimum Operating Temperature (°C) :

-65

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes