BLF881S,112

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Number of Terminals :

2

Channel Mode :

Enhancement

Supplier Package :

LDMOST

Case Connection :

SOURCE

Maximum Drain Source Voltage (V) :

104

DS Breakdown Voltage-Min :

104 V

Process Technology :

LDMOS

Terminal Form :

Flat

RoHS Status :

RoHS Compliant

ECCN (US) :

EAR99

HTS :

8541.29.00.95

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Military :

No

Product Status :

Active

Minimum Operating Temperature (°C) :

-65

Typical Reverse Transfer Capacitance @ Vds (pF) :

1@50V

Maximum VSWR :

10

PCB changed :

3

Polarity/Channel Type :

N-Channel

Reference Standard :

IEC-60134

Package Height :

4.67(Max)

Transistor Application :

AMPLIFIER

Maximum Frequency (MHz) :

860

Series :

*

Number of Elements per Chip :

1

Output Power (W) :

140(Typ)

Typical Drain Efficiency (%) :

49

Package :

Bulk

Base Product Number :

BLF88

Typical Output Capacitance @ Vds (pF) :

33.5@50V

Mounting :

Surface Mount

Minimum Frequency (MHz) :

1

Manufacturer :

Ampleon

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND

Configuration :

Single

JESD-30 Code :

R-CDFP-F2

Package Length :

9.78(Max)

Factory Lead Time :

26 Weeks

Pin Count :

3

Maximum Gate Source Voltage (V) :

13

Channel Type :

N

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Terminal Position :

Dual

Typical Input Capacitance @ Vds (pF) :

100@50V

Mode of Operation :

DVB-T|2-Tone Class-AB

Maximum Operating Temperature (°C) :

200

Typical Power Gain (dB) :

21

Maximum Drain Source Resistance (mOhm) :

210(Typ)@6.15V

Reach Compliance Code :

Unknown

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Packaging :

Bulk

Package Width :

5.92(Max)