BLF881S,112

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Polarity/Channel Type :

N-Channel

Output Power (W) :

140(Typ)

Mode of Operation :

DVB-T|2-Tone Class-AB

HTS :

8541.29.00.95

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Typical Drain Efficiency (%) :

49

Case Connection :

SOURCE

Product Status :

Active

RoHS Status :

RoHS Compliant

Manufacturer :

Ampleon

Series :

*

Maximum Gate Source Voltage (V) :

13

Number of Terminals :

2

Maximum Frequency (MHz) :

860

Base Product Number :

BLF88

Typical Power Gain (dB) :

21

Maximum Operating Temperature (°C) :

200

Process Technology :

LDMOS

DS Breakdown Voltage-Min :

104 V

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND

Supplier Package :

LDMOST

JESD-30 Code :

R-CDFP-F2

Package Width :

5.92(Max)

Number of Elements per Chip :

1

ECCN (US) :

EAR99

Number of Elements :

1

Terminal Form :

Flat

Typical Reverse Transfer Capacitance @ Vds (pF) :

1@50V

PCB changed :

3

Minimum Frequency (MHz) :

1

Reference Standard :

IEC-60134

Mounting :

Surface Mount

Factory Lead Time :

26 Weeks

Transistor Element Material :

SILICON

Package Height :

4.67(Max)

Package Shape :

RECTANGULAR

Maximum VSWR :

10

Terminal Position :

Dual

Minimum Operating Temperature (°C) :

-65

Transistor Application :

AMPLIFIER

Surface Mount :

yes

Typical Output Capacitance @ Vds (pF) :

33.5@50V

Maximum Drain Source Resistance (mOhm) :

210(Typ)@6.15V

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Bulk

Channel Type :

N

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Package :

Bulk

Military :

No

Maximum Drain Source Voltage (V) :

104

Typical Input Capacitance @ Vds (pF) :

100@50V

Package Length :

9.78(Max)

Configuration :

Single