BLF881S,112

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Maximum Drain Source Voltage (V) :

104

Transistor Element Material :

SILICON

PCB changed :

3

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

HTS :

8541.29.00.95

DS Breakdown Voltage-Min :

104 V

Maximum Drain Source Resistance (mOhm) :

210(Typ)@6.15V

Supplier Package :

LDMOST

Typical Output Capacitance @ Vds (pF) :

33.5@50V

Reach Compliance Code :

Unknown

Maximum Operating Temperature (°C) :

200

Pin Count :

3

Channel Mode :

Enhancement

Reference Standard :

IEC-60134

Number of Terminals :

2

Package Length :

9.78(Max)

Operating Mode :

ENHANCEMENT MODE

Maximum Frequency (MHz) :

860

Case Connection :

SOURCE

Factory Lead Time :

26 Weeks

Output Power (W) :

140(Typ)

Configuration :

Single

Terminal Position :

Dual

Number of Elements :

1

Military :

No

Typical Reverse Transfer Capacitance @ Vds (pF) :

1@50V

Typical Drain Efficiency (%) :

49

Package Width :

5.92(Max)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements per Chip :

1

Maximum VSWR :

10

Maximum Gate Source Voltage (V) :

13

Terminal Form :

Flat

Channel Type :

N

Minimum Operating Temperature (°C) :

-65

Manufacturer :

Ampleon

Typical Input Capacitance @ Vds (pF) :

100@50V

Mode of Operation :

DVB-T|2-Tone Class-AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Minimum Frequency (MHz) :

1

Packaging :

Bulk

Surface Mount :

yes

Transistor Application :

AMPLIFIER

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND

ECCN (US) :

EAR99

Process Technology :

LDMOS

Package :

Bulk

JESD-30 Code :

R-CDFP-F2

Series :

*

Base Product Number :

BLF88

Package Height :

4.67(Max)

Mounting :

Surface Mount

Product Status :

Active

Typical Power Gain (dB) :

21