BLF881S,112

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Configuration :

Single

Reference Standard :

IEC-60134

Maximum VSWR :

10

ECCN (US) :

EAR99

RoHS Status :

RoHS Compliant

Maximum Drain Source Resistance (mOhm) :

210(Typ)@6.15V

DS Breakdown Voltage-Min :

104 V

Minimum Frequency (MHz) :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements per Chip :

1

HTS :

8541.29.00.95

Terminal Form :

Flat

Manufacturer :

Ampleon

Typical Power Gain (dB) :

21

JESD-30 Code :

R-CDFP-F2

Transistor Element Material :

SILICON

Process Technology :

LDMOS

Typical Input Capacitance @ Vds (pF) :

100@50V

Mounting :

Surface Mount

Surface Mount :

yes

Base Product Number :

BLF88

Reach Compliance Code :

Unknown

PCB changed :

3

Transistor Application :

AMPLIFIER

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Military :

No

Maximum Drain Source Voltage (V) :

104

Supplier Package :

LDMOST

Maximum Operating Temperature (°C) :

200

Maximum Gate Source Voltage (V) :

13

Mode of Operation :

DVB-T|2-Tone Class-AB

Number of Elements :

1

Package Length :

9.78(Max)

Channel Type :

N

Typical Drain Efficiency (%) :

49

Number of Terminals :

2

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Output Power (W) :

140(Typ)

Case Connection :

SOURCE

Channel Mode :

Enhancement

Typical Reverse Transfer Capacitance @ Vds (pF) :

1@50V

Product Status :

Active

Typical Output Capacitance @ Vds (pF) :

33.5@50V

Factory Lead Time :

26 Weeks

Series :

*

Minimum Operating Temperature (°C) :

-65

Pin Count :

3

Packaging :

Bulk

Package Width :

5.92(Max)

Maximum Frequency (MHz) :

860

Package Height :

4.67(Max)

Terminal Position :

Dual

Package :

Bulk