BGB717L7ESDE6327

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Mfr.Part #
BGB717L7ESDE6327
Manufacturer
Infineon Technologies
Package / Case
Datasheet
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Description
NARROW BAND LOW POWER AMPLIFIER,
Stock
90,000
In Stock :
90,000

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Manufacturer :
Infineon Technologies
Product Category :
RF Amplifiers
RF/Microwave Device Type :
NARROW BAND LOW POWER
Characteristic Impedance :
50Ohm
Max Operating Temperature :
150°C
P1dB :
-5.5 dBm
Test Frequency :
100MHz
Noise Figure :
1 dB
Operating Supply Voltage :
4V
Min Operating Temperature :
-55°C
Packaging :
Digi-Reel®
Operating Supply Current :
3mA
Power Dissipation-Max :
100mW
Frequency :
108MHz
RoHS Status :
RoHS Compliant
Number of Pins :
6
Gain :
12 dB
Construction :
COMPONENT
Radiation Hardening :
No
Datasheets
BGB717L7ESDE6327
Introducing RF Amplifiers Infineon Technologies BGB717L7ESDE6327 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Gain:12 dB, BGB717L7ESDE6327 pinout, BGB717L7ESDE6327 datasheet PDF, BGB717L7ESDE6327 amp .Beyond RF Amplifiers Infineon Technologies BGB717L7ESDE6327 ,we also offer PGA-103+, ERA-3SM+, PGA-105+, Our vast inventory has you covered. Contact us now for immediate solutions.



12 dB NARROW BAND LOW POWER Digi-Reel® 108MHz P1dB:-5.5 dBm 1 dB 3mA

BGB717L7ESDE6327 Overview


A cost-effective RF amplifier with NARROW BAND LOW POWER RF/Microwave device type.High reliability is achieved using advanced RF Amp' packaging Digi-Reel®.For it to perform as expected, the supply current must be in the range of 3mA.6 pins are on the high power RF Amplifier.At a temperature around 150°C degrees Celsius, RF power Amplifier shouldbe running.

BGB717L7ESDE6327 Features


NARROW BAND LOW POWER RF/Microwave Amplifier
6 pins


BGB717L7ESDE6327 Applications


There are a lot of Infineon Technologies
BGB717L7ESDE6327 RF Amplifiers applications.


  • Avionics
  • GPS
  • GLONASS
  • BeiDou
  • Galileo
  • Wireless communications
  • ISM applications
  • Wireless infrastructure
  • Automated test equipment
  • RF/IF gain control
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Shipping Cost

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