BFN19E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-F3

Terminal Position :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA, 10V

Manufacturer :

Infineon Technologies AG

Power - Max :

1 W

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Package Shape :

RECTANGULAR

Collector Current-Max (IC) :

0.2 A

Product Status :

Active

Surface Mount :

yes

Package / Case :

TO-243AA

Factory Lead Time :

1 Week

Current - Collector Cutoff (Max) :

100nA (ICBO)

Case Connection :

COLLECTOR

Configuration :

Single

Package :

Bulk

Terminal Form :

Flat

Number of Elements :

1

Operating Temperature :

150°C (TJ)

Frequency - Transition :

100MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Voltage - Collector Emitter Breakdown (Max) :

300 V

Transistor Element Material :

SILICON

Supplier Device Package :

PG-SOT89

Mounting Type :

Surface Mount

Collector-Emitter Voltage-Max :

300 V

Polarity/Channel Type :

PNP

Number of Terminals :

3

Pbfree Code :

yes

Qualification Status :

Not Qualified

Series :

-

DC Current Gain-Min (hFE) :

30

Current - Collector (Ic) (Max) :

200 mA

Transistor Type :

PNP

Transistor Application :

SWITCHING