BF570,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

4.5V

Transition Frequency :

490MHz

Mount :

Surface Mount

Max Power Dissipation :

250mW

Frequency :

500MHz

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

400nA ICBO

Collector Emitter Voltage (VCEO) :

15V

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 1V

Factory Lead Time :

4 Weeks

Collector Base Voltage (VCBO) :

40V

Number of Terminations :

3

Number of Pins :

3

Number of Elements :

1

Element Configuration :

Single

Gain Bandwidth Product :

500MHz

Collector Emitter Breakdown Voltage :

15V

Published :

2013

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Power Dissipation :

250mW

Pin Count :

3

Terminal Form :

Gull wing

Base Part Number :

BF570

Max Breakdown Voltage :

15V

Transistor Type :

NPN

Contact Plating :

Tin

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Series :

Automotive, AEC-Q101

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

490MHz

ECCN Code :

EAR99

Max Collector Current :

100mA