BDW23-S

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Mfr.Part #
BDW23-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 45V 6A TO220
Stock
41,272
In Stock :
41,272

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Pbfree Code :
yes
JESD-609 Code :
e1
Current - Collector Cutoff (Max) :
500μA
Number of Elements :
1
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
3V @ 60mA, 6A
JEDEC-95 Code :
TO-220AB
Element Configuration :
Single
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
45V
Terminal Finish :
TIN SILVER COPPER
Package / Case :
TO-220-3
Case Connection :
COLLECTOR
Pin Count :
3
Emitter Base Voltage (VEBO) :
5V
Transistor Type :
NPN - Darlington
Published :
1993
Radiation Hardening :
No
JESD-30 Code :
R-PSFM-T3
Operating Temperature :
-65°C~150°C TJ
Collector Emitter Voltage (VCEO) :
45V
Packaging :
Tube
Max Collector Current :
6A
Max Power Dissipation :
2W
Power - Max :
2W
Number of Terminations :
3
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity :
NPN
RoHS Status :
ROHS3 Compliant
Collector Emitter Saturation Voltage :
2V
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
45V
Base Part Number :
BDW23
Datasheets
BDW23-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW23-S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:BDW23, BDW23-S pinout, BDW23-S datasheet PDF, BDW23-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW23-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDW23-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDW23-S Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 2A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 60mA, 6A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 6A volts at its maximum.

BDW23-S Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 60mA, 6A
the emitter base voltage is kept at 5V


BDW23-S Applications


There are a lot of Bourns Inc.
BDW23-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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