BDT61A-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity :

NPN

Pbfree Code :

yes

Terminal Finish :

TIN SILVER COPPER

Collector Base Voltage (VCBO) :

80V

Base Part Number :

BDT61

Published :

1993

Packaging :

Tube

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

2.5V

Mount :

Through Hole

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Mounting Type :

Through Hole

JESD-609 Code :

e1

Power - Max :

2W

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

80V

Max Collector Current :

4A

Max Power Dissipation :

2W

Radiation Hardening :

No

Pin Count :

3

Transistor Type :

NPN - Darlington

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

500μA

hFE Min :

750

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 6mA, 1.5A

Emitter Base Voltage (VEBO) :

5V

Package / Case :

TO-220-3

Number of Terminations :

3

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

JESD-30 Code :

R-PSFM-T3

Collector Emitter Breakdown Voltage :

80V