BD810G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

Lead Free :

Lead Free

Gain Bandwidth Product :

1.5MHz

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Saturation Voltage :

1.1V

Factory Lead Time :

2 Weeks

Published :

2001

Transistor Type :

PNP

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 4A 2V

Pin Count :

3

Current - Collector Cutoff (Max) :

1mA ICBO

Max Collector Current :

10A

Collector Emitter Voltage (VCEO) :

80V

Number of Terminations :

3

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

80V

Current Rating :

10A

Transition Frequency :

1.5MHz

Polarity/Channel Type :

PNP

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Case Connection :

COLLECTOR

Package / Case :

TO-220-3

Voltage - Rated DC :

-80V

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

90W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Frequency :

1.5MHz

Transistor Application :

AMPLIFIER

REACH SVHC :

No SVHC

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 300mA, 3A

hFE Min :

30

Transistor Element Material :

SILICON

Max Power Dissipation :

90W

Weight :

4.535924g

Width :

12.7mm

Radiation Hardening :

No

Height :

6.35mm

Number of Elements :

1

Collector Emitter Breakdown Voltage :

80V

Contact Plating :

Tin

Length :

31.75mm