BD711

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Mfr.Part #
BD711
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 12A TO220
Stock
11,727
In Stock :
11,727

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-220-3
Transistor Type :
NPN
Collector Emitter Saturation Voltage :
1V
Emitter Base Voltage (VEBO) :
5V
Number of Elements :
1
JESD-609 Code :
e3
Polarity/Channel Type :
NPN
Base Part Number :
BD711
Transition Frequency :
3MHz
Length :
10.4mm
Height :
9.15mm
Pbfree Code :
yes
Mounting Type :
Through Hole
Width :
4.6mm
Max Power Dissipation :
75W
REACH SVHC :
No SVHC
Collector Emitter Breakdown Voltage :
100V
Operating Temperature :
150°C TJ
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
12A
Power Dissipation :
75W
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 4A 4V
Number of Terminations :
3
Weight :
4.535924g
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
100mA
Frequency :
3MHz
Transistor Application :
SWITCHING
hFE Min :
40
ECCN Code :
EAR99
Element Configuration :
Single
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
100V
Number of Pins :
3
Terminal Finish :
Matte Tin (Sn)
VCEsat-Max :
1 V
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 4A
Gain Bandwidth Product :
3MHz
Radiation Hardening :
No
Packaging :
Tube
Pin Count :
3
Collector Base Voltage (VCBO) :
100V
JEDEC-95 Code :
TO-220AB
Datasheets
BD711
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD711 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Base Part Number:BD711, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Terminations:3, Number of Pins:3, BD711 pinout, BD711 datasheet PDF, BD711 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD711 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD711


NPN 150°C TJ 100mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD711 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 4A 4V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 12A volts can be achieved.

BD711 Features


the DC current gain for this device is 15 @ 4A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


BD711 Applications


There are a lot of STMicroelectronics
BD711 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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