BD711
- Mfr.Part #
- BD711
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 12A TO220
- Stock
- 11,727
- In Stock :
- 11,727
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- hFE Min :
- 40
- Max Collector Current :
- 12A
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 100V
- Height :
- 9.15mm
- Package / Case :
- TO-220-3
- JEDEC-95 Code :
- TO-220AB
- Collector Base Voltage (VCBO) :
- 100V
- Length :
- 10.4mm
- Collector Emitter Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 75W
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 4V
- Collector Emitter Saturation Voltage :
- 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Power Dissipation :
- 75W
- Transition Frequency :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- VCEsat-Max :
- 1 V
- Gain Bandwidth Product :
- 3MHz
- Weight :
- 4.535924g
- Base Part Number :
- BD711
- Frequency :
- 3MHz
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 4A
- Width :
- 4.6mm
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100mA
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Datasheets
- BD711
BD711 Documents

NPN 150°C TJ 100mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD711 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 4A 4V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 12A volts can be achieved.
BD711 Features
the DC current gain for this device is 15 @ 4A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD711 Applications
There are a lot of STMicroelectronics
BD711 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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