BD711
- Mfr.Part #
- BD711
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 12A TO220
- Stock
- 11,727
- In Stock :
- 11,727
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 9.15mm
- Max Power Dissipation :
- 75W
- Number of Terminations :
- 3
- Power Dissipation :
- 75W
- Packaging :
- Tube
- Width :
- 4.6mm
- Collector Base Voltage (VCBO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 4A
- Max Collector Current :
- 12A
- Pbfree Code :
- yes
- Length :
- 10.4mm
- Package / Case :
- TO-220-3
- Gain Bandwidth Product :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100mA
- Terminal Finish :
- Matte Tin (Sn)
- JEDEC-95 Code :
- TO-220AB
- Weight :
- 4.535924g
- Collector Emitter Voltage (VCEO) :
- 100V
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 4V
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1V
- Frequency :
- 3MHz
- Base Part Number :
- BD711
- Radiation Hardening :
- No
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- VCEsat-Max :
- 1 V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Transition Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 40
- Datasheets
- BD711

NPN 150°C TJ 100mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD711 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 4A 4V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 12A volts can be achieved.
BD711 Features
the DC current gain for this device is 15 @ 4A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD711 Applications
There are a lot of STMicroelectronics
BD711 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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