BD679
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- Mfr.Part #
- BD679
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A SOT32-3
- Stock
- 39,040
- In Stock ：
- 39,040
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Transistor Type :
- NPN - Darlington
- Radiation Hardening :
- No
- Current Rating :
- 4A
- Voltage - Rated DC :
- 80V
- Max Collector Current :
- 4A
- Power Dissipation :
- 40W
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 750
- Case Connection :
- Isolated
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-225AA, TO-126-3
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- Height :
- 11.05mm
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BD679
- Max Power Dissipation :
- 40W
- Length :
- 7.8mm
- Current - Collector Cutoff (Max) :
- 500μA
- Polarity :
- NPN
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 2.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Packaging :
- Tube
- Transition Frequency :
- 10MHz
- Width :
- 2.9mm
- Datasheets
- BD679
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
The BD679 is an NPN darlington transistor that comes in two packages: TO-225 and TO-126. A darlington transistor is made up of two BJT transistors in a single package that are coupled in such a way that the output gain is extremely high.
The transistor's maximum gain, or Hfe, is 1000, making it suited for high gain applications. The collector current maximum is 4A, with a peak collector current of 6A.
The transistor's collector-emitter voltage, or maximum load voltage, is 80V, and its collector dissipation is 40Watt. The BD679 can be utilized in a wide range of switching and amplification applications.
BD679 Features
Transistor Type: NPN
Max Collector Current(IC): 4A
Package Type: TO-225, TO-126
Pb-Free Packages are Available
Max Peak Collector Current: 6A
Max Emitter-Base Voltage (VEBO): 5V
Max Collector Dissipation (Pc): 40 Watt
Max Collector-Base Voltage (VCB): 80V
Max Collector-Emitter Voltage (VCE): 80V
Minimum & Maximum DC Current Gain (hFE): 1000
Max Storage & Operating temperature: -65 to +150 Centigrade
BD679 Applications
BMS Circuits
Motor Driver Circuits
Switching Application
Medium Power Linear
Battery Charger Circuits
Audio Amplifier Circuits
General–Purpose Amplifier
Audio Preamplifiers and Its Stages
Driving or Switching Loads under 4A
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