BD678G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BD678

Transistor Type :

PNP - Darlington

Transistor Element Material :

SILICON

Number of Pins :

3

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current - Collector Cutoff (Max) :

500μA

Collector Base Voltage (VCBO) :

60V

hFE Min :

750

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

5 Weeks

Emitter Base Voltage (VEBO) :

5V

Contact Plating :

Tin

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Pbfree Code :

yes

Polarity :

PNP

Number of Terminations :

3

Current Rating :

-4A

Number of Elements :

1

Published :

1995

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Max Power Dissipation :

40W

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

2.5V

Halogen Free :

Halogen Free

Packaging :

Bulk

ECCN Code :

EAR99

Max Collector Current :

4A

Power Dissipation :

40W

Collector Emitter Voltage (VCEO) :

60V

Transition Frequency :

200MHz

Package / Case :

TO-225AA, TO-126-3

Element Configuration :

Single

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

60V

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-60V