BD678AS

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Mfr.Part #
BD678AS
Manufacturer
Fairchild Semiconductor
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 60V 4A TO126-3
Stock
1
In Stock :
1

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Number of Terminations :
3
Weight :
761mg
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Collector Emitter Voltage (VCEO) :
60V
Published :
2002
Collector Base Voltage (VCBO) :
-60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
BD678
Contact Plating :
Tin
Radiation Hardening :
No
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
60V
Transistor Type :
PNP - Darlington
Packaging :
Bulk
Operating Temperature :
150°C TJ
Height :
11mm
Width :
3.25mm
JESD-30 Code :
R-PSFM-T3
Polarity :
PNP
hFE Min :
750
Mount :
Through Hole
Voltage - Rated DC :
-60V
JESD-609 Code :
e3
Collector Emitter Saturation Voltage :
2.8V
Current Rating :
-4A
Transistor Application :
SWITCHING
Element Configuration :
Single
Pbfree Code :
yes
Current - Collector Cutoff (Max) :
500μA
Max Power Dissipation :
14W
Number of Elements :
1
Power - Max :
14W
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
Max Collector Current :
4A
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
-5V
Package / Case :
TO-225AA, TO-126-3
Length :
8mm
Continuous Collector Current :
-4A
Factory Lead Time :
6 Weeks
Lead Free :
Lead Free
Datasheets
BD678AS
Introducing Transistors - Bipolar (BJT) - Single Fairchild Semiconductor BD678AS from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:BD678, Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, BD678AS pinout, BD678AS datasheet PDF, BD678AS amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor BD678AS ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor BD678AS


PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

BD678AS Overview


This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.8V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -4A is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.The maximum collector current is 4A volts.

BD678AS Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A


BD678AS Applications


There are a lot of ON Semiconductor
BD678AS applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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