BD678AS

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Contact Plating :

Tin

JESD-609 Code :

e3

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Voltage - Rated DC :

-60V

Current - Collector Cutoff (Max) :

500μA

Transistor Application :

SWITCHING

Max Power Dissipation :

14W

Continuous Collector Current :

-4A

Length :

8mm

ECCN Code :

EAR99

Polarity :

PNP

Radiation Hardening :

No

Max Collector Current :

4A

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Packaging :

Bulk

Mount :

Through Hole

Transistor Element Material :

SILICON

Factory Lead Time :

6 Weeks

Height :

11mm

Emitter Base Voltage (VEBO) :

-5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

60V

hFE Min :

750

Base Part Number :

BD678

Operating Temperature :

150°C TJ

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

60V

Width :

3.25mm

Transistor Type :

PNP - Darlington

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

Collector Emitter Saturation Voltage :

2.8V

Mounting Type :

Through Hole

Package / Case :

TO-225AA, TO-126-3

Collector Base Voltage (VCBO) :

-60V

Power - Max :

14W

Element Configuration :

Single

Current Rating :

-4A

Weight :

761mg

Published :

2002

RoHS Status :

ROHS3 Compliant