BD678AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

11.04mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Pbfree Code :

yes

hFE Min :

750

Weight :

4.535924g

Length :

7.74mm

Transistor Type :

PNP - Darlington

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Through Hole

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Emitter Breakdown Voltage :

60V

Surface Mount :

No

Base Part Number :

BD678

Collector Emitter Voltage (VCEO) :

60V

Transistor Element Material :

SILICON

Power Dissipation :

40W

Halogen Free :

Halogen Free

Published :

2005

ECCN Code :

EAR99

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

JESD-609 Code :

e3

Max Power Dissipation :

40W

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

450V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Max Collector Current :

4A

Voltage - Rated DC :

-60V

Number of Elements :

1

Pin Count :

3

Collector Emitter Saturation Voltage :

2.8V

Collector Base Voltage (VCBO) :

60V

Factory Lead Time :

2 Weeks

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

500μA

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

260

Current Rating :

4A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Package / Case :

TO-225AA, TO-126-3

Width :

2.66mm

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A