BD678A
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- Mfr.Part #
- BD678A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 4A SOT32-3
- Stock
- 11,987
- In Stock ：
- 11,987
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 4A
- Height :
- 10.8mm
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- hFE Min :
- 750
- Continuous Collector Current :
- 4A
- Package / Case :
- TO-225AA, TO-126-3
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Case Connection :
- Isolated
- Mount :
- Through Hole
- Current Rating :
- -4A
- Power Dissipation :
- 40W
- Polarity :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Collector Emitter Saturation Voltage :
- 2.8V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Factory Lead Time :
- 8 Weeks
- Max Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 60V
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Pin Count :
- 3
- Packaging :
- Tube
- Voltage - Rated DC :
- -60V
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 40W
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 500μA
- Transistor Type :
- PNP - Darlington
- Base Part Number :
- BD678
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Length :
- 7.8mm
- Width :
- 2.7mm
- Transition Frequency :
- 10MHz
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Datasheets
- BD678A
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD678A Overview
In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 40mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD678A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD678A Applications
There are a lot of STMicroelectronics
BD678A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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