BD678
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- Mfr.Part #
- BD678
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 4A SOT32-3
- Stock
- 43,969
- In Stock ：
- 43,969
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 60V
- hFE Min :
- 750
- Pin Count :
- 3
- Width :
- 2.9mm
- Number of Pins :
- 3
- Height :
- 11.05mm
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2.5V
- Polarity :
- PNP
- Max Collector Current :
- 4A
- Transition Frequency :
- 10MHz
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP - Darlington
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Current Rating :
- -4A
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -60V
- Power Dissipation :
- 40W
- REACH SVHC :
- No SVHC
- Length :
- 7.8mm
- Base Part Number :
- BD678
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max) :
- 500μA
- Contact Plating :
- Tin
- Max Power Dissipation :
- 40W
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Datasheets
- BD678
BD678 Documents
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD678 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 30mA, 1.5A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 10MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BD678 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD678 Applications
There are a lot of STMicroelectronics
BD678 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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