BD677G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

hFE Min :

750

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Voltage - Rated DC :

-60V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Element Configuration :

Single

ECCN Code :

EAR99

Polarity :

NPN

Packaging :

Bulk

Transistor Type :

NPN - Darlington

Power Dissipation :

40W

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Max Power Dissipation :

40W

Transition Frequency :

200MHz

Collector Base Voltage (VCBO) :

60V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Emitter Saturation Voltage :

2.5V

Transistor Application :

AMPLIFIER

Published :

1995

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

60V

Number of Pins :

3

Base Part Number :

BD677

Halogen Free :

Halogen Free

Current Rating :

-4A

JESD-609 Code :

e3

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500μA

Factory Lead Time :

11 Weeks

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Number of Terminations :

3

Max Collector Current :

4A

Package / Case :

TO-225AA, TO-126-3

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Collector Emitter Voltage (VCEO) :

60V

Number of Elements :

1