BD677ASTU
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- Mfr.Part #
- BD677ASTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO126-3
- Stock
- 505
- In Stock ：
- 505
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- Mount :
- Through Hole
- Power Dissipation :
- 40W
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 2.8V
- Package / Case :
- TO-225AA, TO-126-3
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Tube
- Weight :
- 761mg
- hFE Min :
- 750
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 10MHz
- Voltage - Rated DC :
- 60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- NPN - Darlington
- Base Part Number :
- BD677
- Published :
- 2000
- Current Rating :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 4A
- Polarity :
- NPN
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 500μA
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 4A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 40W
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Datasheets
- BD677ASTU
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD677ASTU Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.8V.A VCE saturation (Max) of 2.8V @ 40mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 10MHz.A maximum collector current of 4A volts is possible.
BD677ASTU Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD677ASTU Applications
There are a lot of ON Semiconductor
BD677ASTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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