BD677AS

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Published :

2000

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

hFE Min :

750

Contact Plating :

Tin

Transistor Element Material :

SILICON

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Transistor Type :

NPN - Darlington

Emitter Base Voltage (VEBO) :

5V

Mount :

Through Hole

Current - Collector Cutoff (Max) :

500μA

Factory Lead Time :

6 Weeks

Number of Elements :

1

Element Configuration :

Single

ECCN Code :

EAR99

Power Dissipation :

40W

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

2.8V

Packaging :

Bulk

Continuous Collector Current :

4A

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Voltage - Rated DC :

60V

Package / Case :

TO-225AA, TO-126-3

Base Part Number :

BD677

Max Collector Current :

4A

Transition Frequency :

3MHz

Number of Pins :

3

Max Breakdown Voltage :

60V

Weight :

761mg

Polarity :

NPN

Lead Free :

Lead Free

Max Power Dissipation :

40W

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

4A

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

60V

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

60V

Collector Emitter Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant