BD677A
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- Mfr.Part #
- BD677A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A SOT32-3
- Stock
- 10,575
- In Stock ：
- 10,575
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Length :
- 7.8mm
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Transistor Type :
- NPN - Darlington
- Height :
- 10.8mm
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Factory Lead Time :
- 8 Weeks
- Current Rating :
- 4A
- Number of Terminations :
- 3
- Case Connection :
- Isolated
- Voltage - Rated DC :
- 60V
- hFE Min :
- 750
- Power Dissipation :
- 40W
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-225AA, TO-126-3
- Polarity :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- 4A
- Element Configuration :
- Single
- Transition Frequency :
- 10MHz
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- ECCN Code :
- EAR99
- Base Part Number :
- BD677
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 40W
- Max Collector Current :
- 4A
- Current - Collector Cutoff (Max) :
- 500μA
- Collector Emitter Saturation Voltage :
- 2.8V
- Number of Pins :
- 3
- Width :
- 2.7mm
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- BD677A
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD677A Overview
In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 40mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD677A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD677A Applications
There are a lot of STMicroelectronics
BD677A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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