BD677A
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- Mfr.Part #
- BD677A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A SOT32-3
- Stock
- 10,575
- In Stock ：
- 10,575
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-225AA, TO-126-3
- Pin Count :
- 3
- Height :
- 10.8mm
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Polarity :
- NPN
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 10MHz
- Collector Base Voltage (VCBO) :
- 60V
- Voltage - Rated DC :
- 60V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Power Dissipation :
- 40W
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 40W
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Width :
- 2.7mm
- Length :
- 7.8mm
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 2.8V
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 500μA
- Packaging :
- Tube
- hFE Min :
- 750
- Current Rating :
- 4A
- Max Collector Current :
- 4A
- Radiation Hardening :
- No
- Base Part Number :
- BD677
- Transistor Type :
- NPN - Darlington
- Continuous Collector Current :
- 4A
- Datasheets
- BD677A
BD677A Documents
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD677A Overview
In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 40mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD677A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD677A Applications
There are a lot of STMicroelectronics
BD677A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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