BD677

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Mfr.Part #
BD677
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 60V 4A SOT32-3
Stock
20,471
In Stock :
20,471

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Current - Collector Cutoff (Max) :
500μA
Factory Lead Time :
8 Weeks
Package / Case :
TO-225AA, TO-126-3
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
Number of Pins :
3
Emitter Base Voltage (VEBO) :
5V
Power Dissipation :
40W
Radiation Hardening :
No
JESD-609 Code :
e3
Collector Emitter Saturation Voltage :
2.5V
Contact Plating :
Tin
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Case Connection :
Isolated
Number of Terminations :
3
Width :
2.7mm
Lead Free :
Lead Free
Operating Temperature :
150°C TJ
Max Collector Current :
4A
Collector Emitter Breakdown Voltage :
60V
Element Configuration :
Single
Polarity :
NPN
Voltage - Rated DC :
60V
REACH SVHC :
No SVHC
Transistor Type :
NPN - Darlington
Height :
10.8mm
Collector Emitter Voltage (VCEO) :
60V
Collector Base Voltage (VCBO) :
60V
Max Power Dissipation :
40W
hFE Min :
750
ECCN Code :
EAR99
Number of Elements :
1
Base Part Number :
BD677
Current Rating :
4A
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Transition Frequency :
10MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Packaging :
Tube
Length :
7.8mm
Datasheets
BD677
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD677 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Number of Terminations:3, Operating Temperature:150°C TJ, Base Part Number:BD677, Mounting Type:Through Hole, BD677 pinout, BD677 datasheet PDF, BD677 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD677 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD677


NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole

BD677 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 30mA, 1.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 4A volts at its maximum.

BD677 Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz


BD677 Applications


There are a lot of STMicroelectronics
BD677 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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