BD676G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Contact Plating :

Tin

REACH SVHC :

No SVHC

Max Power Dissipation :

40W

Element Configuration :

Single

Factory Lead Time :

2 Weeks

Max Collector Current :

4A

Length :

7.74mm

Transistor Element Material :

SILICON

Pbfree Code :

yes

Current Rating :

-4A

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Surface Mount :

No

Collector Emitter Voltage (VCEO) :

45V

Number of Pins :

3

JESD-609 Code :

e3

Transistor Type :

PNP - Darlington

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

45V

Polarity :

PNP

Width :

2.66mm

Mounting Type :

Through Hole

Halogen Free :

Halogen Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

500μA

Power Dissipation :

40W

Operating Temperature :

-55°C~150°C TJ

Packaging :

Bulk

Published :

2005

Voltage - Rated DC :

-45V

Transition Frequency :

200MHz

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Base Part Number :

BD676

Collector Base Voltage (VCBO) :

45V

hFE Min :

750

Pin Count :

3

Height :

11.04mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Lead Free :

Lead Free

Package / Case :

TO-225AA, TO-126-3

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant