BD676AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500μA

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Number of Elements :

1

Pin Count :

3

Transistor Application :

AMPLIFIER

Packaging :

Bulk

Transistor Type :

PNP - Darlington

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

JESD-609 Code :

e3

Surface Mount :

No

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

45V

Radiation Hardening :

No

Current Rating :

-4A

Power Dissipation :

40W

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-225AA, TO-126-3

ECCN Code :

EAR99

Max Collector Current :

4A

Collector Emitter Saturation Voltage :

2.5V

Polarity :

PNP

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

45V

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

45V

Halogen Free :

Halogen Free

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

Max Power Dissipation :

40W

hFE Min :

750

Element Configuration :

Single

Lead Free :

Lead Free

Base Part Number :

BD676

Voltage - Rated DC :

-45V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

2 Weeks