BD676

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Mfr.Part #
BD676
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 45V 4A TO126
Stock
1,239
In Stock :
1,239

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP - Darlington
Max Power Dissipation :
40W
Lead Free :
Contains Lead
Collector Emitter Voltage (VCEO) :
45V
Emitter Base Voltage (VEBO) :
5V
Package / Case :
TO-225AA, TO-126-3
Packaging :
Bulk
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
Non-RoHS Compliant
Current - Collector (Ic) (Max) :
4A
Polarity :
PNP
Power Dissipation :
40W
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
Voltage - Rated DC :
-45V
Number of Pins :
3
Continuous Collector Current :
4A
Max Collector Current :
4A
Min Operating Temperature :
-55°C
Current Rating :
-4A
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 3 days ago)
Published :
2008
Element Configuration :
Single
Power - Max :
40W
Collector Emitter Breakdown Voltage :
45V
Collector Base Voltage (VCBO) :
45V
Base Part Number :
BD676
Number of Elements :
1
Current - Collector Cutoff (Max) :
500μA
hFE Min :
750
Mounting Type :
Through Hole
Supplier Device Package :
TO-225AA
Operating Temperature :
-55°C~150°C TJ
Voltage - Collector Emitter Breakdown (Max) :
45V
Max Operating Temperature :
150°C
Datasheets
BD676
Introducing Transistors - Bipolar (BJT) - Single onsemi BD676 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Base Part Number:BD676, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, BD676 pinout, BD676 datasheet PDF, BD676 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD676 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD676


PNP - Darlington -55°C~150°C TJ 500μA 1 Elements TO-225AA, TO-126-3 Bulk Through Hole

BD676 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.When VCE saturation is 2.5V @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.Supplier package TO-225AA contains the product.The device has a 45V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 4A volts can be achieved.

BD676 Features


the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
the supplier device package of TO-225AA


BD676 Applications


There are a lot of ON Semiconductor
BD676 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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