BD675AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2008

Base Part Number :

BD675

Radiation Hardening :

No

ECCN Code :

EAR99

Packaging :

Bulk

Height :

11.04mm

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Max Collector Current :

4A

Pin Count :

3

Transistor Element Material :

SILICON

Width :

2.66mm

Polarity :

NPN

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Transistor Type :

NPN - Darlington

Halogen Free :

Halogen Free

Current Rating :

4A

hFE Min :

750

Number of Pins :

3

Number of Elements :

1

Emitter Base Voltage (VEBO) :

5V

Length :

7.74mm

Package / Case :

TO-225AA, TO-126-3

Current - Collector Cutoff (Max) :

500μA

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

45V

Continuous Collector Current :

4A

Collector Emitter Saturation Voltage :

2.8V

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

45V

Power Dissipation :

40W

Mounting Type :

Through Hole

Surface Mount :

No

JESD-609 Code :

e3

Gain Bandwidth Product :

1MHz

Voltage - Rated DC :

45V

Max Power Dissipation :

40W

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

Factory Lead Time :

2 Weeks