BD675A

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Mfr.Part #
BD675A
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 45V 4A TO126
Stock
1,501
In Stock :
1,501

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
45V
Collector Base Voltage (VCBO) :
45V
Pbfree Code :
yes
Pin Count :
3
Current Rating :
4A
Element Configuration :
Single
Max Power Dissipation :
40W
Power Dissipation :
40W
Lead Free :
Contains Lead
Base Part Number :
BD675
Max Collector Current :
4A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
500μA
Continuous Collector Current :
4A
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Finish :
Tin (Sn)
Package / Case :
TO-225AA, TO-126-3
Voltage - Rated DC :
45V
hFE Min :
750
Packaging :
Bulk
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Mount :
Through Hole
Published :
2008
Number of Terminations :
3
Transistor Type :
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Qualification Status :
Not Qualified
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
Mounting Type :
Through Hole
Collector Emitter Saturation Voltage :
2.8V
Polarity :
NPN
Collector Emitter Breakdown Voltage :
45V
RoHS Status :
Non-RoHS Compliant
ECCN Code :
EAR99
Transistor Application :
AMPLIFIER
Number of Pins :
3
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Emitter Base Voltage (VEBO) :
5V
Datasheets
BD675A
Introducing Transistors - Bipolar (BJT) - Single onsemi BD675A from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD675, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, BD675A pinout, BD675A datasheet PDF, BD675A amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD675A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD675A


NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

BD675A Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2.8V, which allows for maximum design flexibility.When VCE saturation is 2.8V @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.A maximum collector current of 4A volts can be achieved.

BD675A Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A


BD675A Applications


There are a lot of ON Semiconductor
BD675A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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