BD651-S

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Mfr.Part #
BD651-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 120V 8A TO220
Stock
3,352
In Stock :
3,352

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
JEDEC-95 Code :
TO-220AB
Emitter Base Voltage (VEBO) :
5V
Case Connection :
COLLECTOR
Package / Case :
TO-220-3
Mount :
Through Hole
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 50mA, 5A
Base Part Number :
BD651
Pbfree Code :
yes
Power - Max :
2W
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
2W
Published :
1993
Mounting Type :
Through Hole
Packaging :
Tube
Max Collector Current :
8A
Collector Emitter Breakdown Voltage :
120V
Operating Temperature :
-65°C~150°C TJ
Transistor Element Material :
SILICON
Collector Base Voltage (VCBO) :
140V
Current - Collector Cutoff (Max) :
500μA
Collector Emitter Saturation Voltage :
2V
Collector Emitter Voltage (VCEO) :
120V
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
JESD-30 Code :
R-PSFM-T3
hFE Min :
750
Polarity :
NPN
Radiation Hardening :
No
Number of Terminations :
3
Transistor Type :
NPN - Darlington
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD651-S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Base Part Number:BD651, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, BD651-S pinout, BD651-S datasheet PDF, BD651-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD651-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD651-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BD651-S Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 50mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.

BD651-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V


BD651-S Applications


There are a lot of Bourns Inc.
BD651-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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