BD439
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- Mfr.Part #
- BD439
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 4A TO126
- Stock
- 18,760
- In Stock ：
- 18,760
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Current Rating :
- 4A
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Frequency :
- 3MHz
- Base Part Number :
- BD439
- Gain Bandwidth Product :
- 3MHz
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 4A
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 60V
- Number of Elements :
- 1
- Number of Pins :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 1V
- Transistor Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 3MHz
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2005
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 36W
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Radiation Hardening :
- No
- hFE Min :
- 20
- Collector Emitter Saturation Voltage :
- 800mV
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 36W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BD439
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD439G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 500mA 1V DC current gain.As it features a collector emitter saturation voltage of 800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 4A volts.
BD439G Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD439G Applications
There are a lot of ON Semiconductor
BD439G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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