BD438STU
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- Mfr.Part #
- BD438STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- POWER BIPOLAR TRANSISTOR, 4A, 45
- Stock
- 2,547
- In Stock ：
- 2,547
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 3.25mm
- Weight :
- 761mg
- Max Power Dissipation :
- 36W
- Collector Base Voltage (VCBO) :
- -45V
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 3MHz
- JESD-609 Code :
- e3
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Package / Case :
- TO-225AA, TO-126-3
- Number of Pins :
- 3
- Mount :
- Through Hole
- Height :
- 11mm
- Power Dissipation :
- 36W
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- -5V
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- -200mV
- Transition Frequency :
- 3MHz
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Voltage - Rated DC :
- -45V
- Max Collector Current :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Length :
- 8mm
- Base Part Number :
- BD438
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Frequency :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- hFE Min :
- 40
- Element Configuration :
- Single
- Current Rating :
- -4A
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Published :
- 2001
- Datasheets
- BD438STU
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438STU Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD438STU Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD438STU Applications
There are a lot of ON Semiconductor
BD438STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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