BD438
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- Mfr.Part #
- BD438
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 4A SOT32-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 7.8mm
- Gain Bandwidth Product :
- 3MHz
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Package / Case :
- TO-225AA, TO-126-3
- Max Power Dissipation :
- 36W
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 45V
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- Width :
- 2.7mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 45V
- Max Collector Current :
- 4A
- Transistor Element Material :
- SILICON
- Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- VCEsat-Max :
- 0.6 V
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Height :
- 10.8mm
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- 200mV
- hFE Min :
- 30
- Current - Collector Cutoff (Max) :
- 100μA
- Max Breakdown Voltage :
- 45V
- Power Dissipation :
- 36W
- Transition Frequency :
- 3MHz
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Base Part Number :
- BD438
- Number of Elements :
- 1
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BD438
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438 Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.3MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
BD438 Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD438 Applications
There are a lot of STMicroelectronics
BD438 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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