BD438
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- Mfr.Part #
- BD438
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 4A SOT32-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Package / Case :
- TO-225AA, TO-126-3
- Gain Bandwidth Product :
- 3MHz
- Frequency :
- 3MHz
- ECCN Code :
- EAR99
- Case Connection :
- Isolated
- Current - Collector Cutoff (Max) :
- 100μA
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Length :
- 7.8mm
- Width :
- 2.7mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Transition Frequency :
- 3MHz
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Radiation Hardening :
- No
- Pin Count :
- 3
- hFE Min :
- 30
- Power Dissipation :
- 36W
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 45V
- Base Part Number :
- BD438
- Collector Emitter Saturation Voltage :
- 200mV
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- VCEsat-Max :
- 0.6 V
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Max Collector Current :
- 4A
- Height :
- 10.8mm
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 45V
- Element Configuration :
- Single
- Max Power Dissipation :
- 36W
- Datasheets
- BD438
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438 Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.3MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
BD438 Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD438 Applications
There are a lot of STMicroelectronics
BD438 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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