BD438
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- Mfr.Part #
- BD438
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 4A SOT32-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 36W
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 4A
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Current - Collector Cutoff (Max) :
- 100μA
- Max Power Dissipation :
- 36W
- Mount :
- Through Hole
- Max Breakdown Voltage :
- 45V
- Collector Emitter Saturation Voltage :
- 200mV
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Factory Lead Time :
- 8 Weeks
- Base Part Number :
- BD438
- Polarity/Channel Type :
- PNP
- hFE Min :
- 30
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Frequency :
- 3MHz
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Height :
- 10.8mm
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-225AA, TO-126-3
- Packaging :
- Tube
- Width :
- 2.7mm
- Transition Frequency :
- 3MHz
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- VCEsat-Max :
- 0.6 V
- JESD-609 Code :
- e3
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Length :
- 7.8mm
- Transistor Type :
- PNP
- Datasheets
- BD438
BD438 Documents
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438 Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.3MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
BD438 Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD438 Applications
There are a lot of STMicroelectronics
BD438 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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