BD437
- Mfr.Part #
- BD437
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 4A SOT32-3
- Stock
- 1,529
- In Stock :
- 1,529
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 4A
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 3MHz
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 4A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 800mV
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Power Dissipation :
- 36W
- Max Power Dissipation :
- 36W
- Transistor Element Material :
- SILICON
- Base Part Number :
- BD437
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 3MHz
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Transition Frequency :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Voltage - Rated DC :
- 45V
- Published :
- 2003
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Packaging :
- Bulk
- hFE Min :
- 30
- Datasheets
- BD437

NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD437G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD437G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD437G Applications
There are a lot of ON Semiconductor
BD437G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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