BD437
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- Mfr.Part #
- BD437
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 4A SOT32-3
- Stock
- 1,529
- In Stock ：
- 1,529
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Transition Frequency :
- 3MHz
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Package / Case :
- TO-225AA, TO-126-3
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Collector Base Voltage (VCBO) :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Collector Emitter Saturation Voltage :
- 800mV
- Packaging :
- Bulk
- Frequency :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 30
- Power Dissipation :
- 36W
- Max Collector Current :
- 4A
- Collector Emitter Voltage (VCEO) :
- 45V
- Base Part Number :
- BD437
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 45V
- Pin Count :
- 3
- Published :
- 2003
- Gain Bandwidth Product :
- 3MHz
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 36W
- Surface Mount :
- No
- Number of Elements :
- 1
- Current Rating :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BD437
BD437 Documents
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD437G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD437G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD437G Applications
There are a lot of ON Semiconductor
BD437G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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