BD436T
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- Mfr.Part #
- BD436T
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 4A TO126
- Stock
- 20,925
- In Stock ：
- 20,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Max Collector Current :
- 4A
- Transition Frequency :
- 3MHz
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- Number of Pins :
- 3
- Terminal Position :
- Single
- Collector Emitter Voltage (VCEO) :
- 500mV
- Max Power Dissipation :
- 36W
- Reach Compliance Code :
- not_compliant
- Collector Emitter Breakdown Voltage :
- 32V
- Collector Base Voltage (VCBO) :
- 32V
- hFE Min :
- 40
- Base Part Number :
- BD436
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Gain Bandwidth Product :
- 3MHz
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 500mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Published :
- 2005
- Voltage - Rated DC :
- -32V
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 240
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Type :
- PNP
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Current - Collector (Ic) (Max) :
- 4A
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -4A
- Datasheets
- BD436T
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PNP -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD436T Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD436T Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD436T Applications
There are a lot of ON Semiconductor
BD436T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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