BD436S

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Mfr.Part #
BD436S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 32V 4A TO126-3
Stock
29,771
In Stock :
29,771

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-225AA, TO-126-3
Max Collector Current :
4A
Packaging :
Bulk
Published :
2001
Power Dissipation :
36W
Factory Lead Time :
2 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 10mA 5V
Max Power Dissipation :
36W
Emitter Base Voltage (VEBO) :
-5V
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
-32V
Number of Pins :
3
Element Configuration :
Single
Gain Bandwidth Product :
3MHz
Number of Terminations :
3
Pbfree Code :
yes
ECCN Code :
EAR99
Frequency :
3MHz
Operating Temperature :
150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Contact Plating :
Tin
hFE Min :
50
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Mount :
Through Hole
Collector Base Voltage (VCBO) :
-32V
Radiation Hardening :
No
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Current Rating :
-4A
Weight :
761mg
Transition Frequency :
3MHz
Number of Elements :
1
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
100μA
Mounting Type :
Through Hole
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
32V
Collector Emitter Breakdown Voltage :
32V
Base Part Number :
BD436
Datasheets
BD436S
Introducing Transistors - Bipolar (BJT) - Single onsemi BD436S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Base Part Number:BD436, BD436S pinout, BD436S datasheet PDF, BD436S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD436S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD436S


PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD436S Overview


In this device, the DC current gain is 40 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).3MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

BD436S Features


the DC current gain for this device is 40 @ 10mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz


BD436S Applications


There are a lot of ON Semiconductor
BD436S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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