BD435STU
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- Mfr.Part #
- BD435STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 4A TO126-3
- Stock
- 25,720
- In Stock ：
- 25,720
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 32V
- Collector Emitter Saturation Voltage :
- 200mV
- Base Part Number :
- BD435
- Collector Base Voltage (VCBO) :
- 32V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Weight :
- 760.986249mg
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Voltage :
- 32V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Mounting Type :
- Through Hole
- Transition Frequency :
- 3MHz
- Max Collector Current :
- 4A
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 5V
- Element Configuration :
- Single
- Current :
- 4A
- Collector Emitter Voltage (VCEO) :
- 32V
- hFE Min :
- 40
- Max Power Dissipation :
- 36W
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 36W
- Gain Bandwidth Product :
- 3MHz
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Package / Case :
- TO-225AA, TO-126-3
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100μA
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 12 Weeks
- Mount :
- Through Hole
- Current Rating :
- 4A
- Published :
- 2017
- Number of Elements :
- 1
- Voltage - Rated DC :
- 32V
- ECCN Code :
- EAR99
- Frequency :
- 3MHz
- Datasheets
- BD435STU
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD435STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 5V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD435STU Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD435STU Applications
There are a lot of ON Semiconductor
BD435STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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