BD435G
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- Mfr.Part #
- BD435G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 4A TO126
- Stock
- 14,655
- In Stock ：
- 14,655
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 36W
- Collector Emitter Voltage (VCEO) :
- 32V
- Factory Lead Time :
- 2 Weeks
- Gain Bandwidth Product :
- 3MHz
- Package / Case :
- TO-225AA, TO-126-3
- hFE Min :
- 40
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Published :
- 2003
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 36W
- Max Collector Current :
- 4A
- Number of Elements :
- 1
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 32V
- Polarity/Channel Type :
- NPN
- Frequency :
- 3MHz
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 32V
- Transition Frequency :
- 3MHz
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Current Rating :
- 4A
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Base Part Number :
- BD435
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 32V
- Datasheets
- BD435G
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD435G Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).3MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD435G Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD435G Applications
There are a lot of ON Semiconductor
BD435G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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