BD244B

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Published :

2007

Power Dissipation :

65W

Max Power Dissipation :

65W

Operating Temperature :

-65°C~150°C TJ

hFE Min :

30

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

JEDEC-95 Code :

TO-220AB

Transistor Type :

PNP

Factory Lead Time :

2 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Emitter Voltage (VCEO) :

80V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1A, 6A

Collector Emitter Saturation Voltage :

1.5V

Frequency :

3MHz

Lead Free :

Lead Free

Number of Pins :

3

Current Rating :

-6A

Pin Count :

3

Base Part Number :

BD244

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

700µA

Mounting Type :

Through Hole

Max Collector Current :

6A

Voltage - Rated DC :

-80V

Number of Terminations :

3

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Number of Elements :

1

Transistor Element Material :

SILICON

Gain Bandwidth Product :

3MHz

Polarity/Channel Type :

PNP

Package / Case :

TO-220-3

Contact Plating :

Tin

Radiation Hardening :

No

Transition Frequency :

3MHz

Packaging :

Tube

JESD-609 Code :

e3

Surface Mount :

No

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

80V