BD241CTU

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Mfr.Part #
BD241CTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 3A TO220-3
Stock
175
In Stock :
175

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
1.2V
Polarity/Channel Type :
NPN
Mounting Type :
Through Hole
Width :
4.5mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
40W
Length :
9.2mm
Max Collector Current :
3A
Voltage - Rated DC :
100V
Transistor Element Material :
SILICON
Package / Case :
TO-220-3
Factory Lead Time :
6 Weeks
Element Configuration :
Single
ECCN Code :
EAR99
Published :
2000
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 1A 4V
Transistor Application :
SWITCHING
hFE Min :
10
Base Part Number :
BD241
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 600mA, 3A
Number of Terminations :
3
Weight :
1.8g
Pbfree Code :
yes
Lead Free :
Lead Free
Collector Base Voltage (VCBO) :
100V
JEDEC-95 Code :
TO-220AB
Operating Temperature :
150°C TJ
Emitter Base Voltage (VEBO) :
5V
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
100V
Transition Frequency :
3MHz
Number of Elements :
1
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
40W
Current Rating :
3A
Lifecycle Status :
LIFETIME (Last Updated: 1 week ago)
Collector Emitter Breakdown Voltage :
100V
Current - Collector Cutoff (Max) :
300μA
Mount :
Through Hole
Contact Plating :
Tin
Height :
14.2mm
Transistor Type :
NPN
Datasheets
BD241CTU
Introducing Transistors - Bipolar (BJT) - Single onsemi BD241CTU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Base Part Number:BD241, Number of Terminations:3, Operating Temperature:150°C TJ, Number of Pins:3, BD241CTU pinout, BD241CTU datasheet PDF, BD241CTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD241CTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD241CTU


NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD241CTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.

BD241CTU Features


the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz


BD241CTU Applications


There are a lot of ON Semiconductor
BD241CTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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