BD241C
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- Mfr.Part #
- BD241C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TO220
- Stock
- 7,562
- In Stock ：
- 7,562
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Width :
- 4.6mm
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 25
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BD241
- Pin Count :
- 3
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Max Collector Current :
- 3A
- Max Power Dissipation :
- 40W
- Collector Emitter Breakdown Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 600mA, 3A
- Collector Emitter Saturation Voltage :
- 1.2V
- Transition Frequency :
- 3MHz
- Length :
- 10.4mm
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 100V
- Power Dissipation :
- 40W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Height :
- 9.15mm
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 300μA
- Datasheets
- BD241C
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD241C Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
BD241C Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD241C Applications
There are a lot of STMicroelectronics
BD241C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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