BD241C
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- Mfr.Part #
- BD241C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TO220
- Stock
- 7,562
- In Stock ：
- 7,562
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 40W
- Collector Emitter Saturation Voltage :
- 1.2V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- hFE Min :
- 25
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 100V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time :
- 8 Weeks
- Length :
- 10.4mm
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Width :
- 4.6mm
- Base Part Number :
- BD241
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 300μA
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Power Dissipation :
- 40W
- Mount :
- Through Hole
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Transition Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Height :
- 9.15mm
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Collector Emitter Breakdown Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 600mA, 3A
- Max Collector Current :
- 3A
- Datasheets
- BD241C
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD241C Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
BD241C Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD241C Applications
There are a lot of STMicroelectronics
BD241C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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