BD241B-S

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Mfr.Part #
BD241B-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 80V 3A TO220
Stock
27,006
In Stock :
27,006

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
NPN
ECCN Code :
EAR99
Package / Case :
TO-220-3
Terminal Finish :
TIN SILVER COPPER
Published :
1993
Current - Collector Cutoff (Max) :
300μA
Base Part Number :
BD241
Packaging :
Tube
Power Dissipation :
40W
Case Connection :
COLLECTOR
Transistor Element Material :
SILICON
Max Power Dissipation :
40W
Emitter Base Voltage (VEBO) :
5V
Max Collector Current :
3A
JEDEC-95 Code :
TO-220AB
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 1A 4V
Number of Elements :
1
Pbfree Code :
yes
Mounting Type :
Through Hole
Power - Max :
2W
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 600mA, 3A
Collector Emitter Voltage (VCEO) :
80V
Collector Emitter Breakdown Voltage :
80V
Number of Pins :
3
JESD-609 Code :
e1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Mount :
Through Hole
Transistor Application :
SWITCHING
Operating Temperature :
-65°C~150°C TJ
Transistor Type :
NPN
Element Configuration :
Single
Datasheets
BD241B-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD241B-S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Base Part Number:BD241, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, BD241B-S pinout, BD241B-S datasheet PDF, BD241B-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD241B-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD241B-S


NPN -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD241B-S Overview


In this device, the DC current gain is 25 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 600mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.

BD241B-S Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V


BD241B-S Applications


There are a lot of Bourns Inc.
BD241B-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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