BD159G
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- Mfr.Part #
- BD159G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO126
- Stock
- 31,747
- In Stock ：
- 31,747
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 375V
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 20W
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- hFE Min :
- 30
- Collector Emitter Breakdown Voltage :
- 100V
- Additional Feature :
- High Reliability
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BD159
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 350V
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Pbfree Code :
- yes
- Current Rating :
- 500mA
- Power Dissipation :
- 20W
- Factory Lead Time :
- 2 Weeks
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 6MHz
- Max Breakdown Voltage :
- 350V
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-225AA, TO-126-3
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Max Collector Current :
- 500mA
- Published :
- 2003
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 350V
- Datasheets
- BD159G
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NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD159G Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 6MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BD159G Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 6MHz
BD159G Applications
There are a lot of ON Semiconductor
BD159G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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