BCP56TA
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- Mfr.Part #
- BCP56TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223-3
- Stock
- 702
- In Stock ：
- 702
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 2W
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Base Part Number :
- BCP56
- Radiation Hardening :
- No
- Additional Feature :
- High Reliability
- Gain Bandwidth Product :
- 150MHz
- Element Configuration :
- Single
- Number of Pins :
- 4
- Pin Count :
- 4
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- Max Power Dissipation :
- 2W
- Width :
- 3.55mm
- Weight :
- 7.994566mg
- hFE Min :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.65mm
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- 500mV
- Transition Frequency :
- 150MHz
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Frequency :
- 150MHz
- Max Breakdown Voltage :
- 80V
- Voltage - Rated DC :
- 80V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 1A
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Published :
- 2011
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Length :
- 6.55mm
- Terminal Form :
- Gull wing
- Max Collector Current :
- 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Datasheets
- BCP56TA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP56TA Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).150MHz is present in the transition frequency.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCP56TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
BCP56TA Applications
There are a lot of Diodes Incorporated
BCP56TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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