BCP56T3G
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- Mfr.Part #
- BCP56T3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 29,268
- In Stock ：
- 29,268
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Base Part Number :
- BCP56
- Pin Count :
- 4
- Width :
- 3.5mm
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- Power Dissipation :
- 1.5W
- Gain Bandwidth Product :
- 130MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Number of Elements :
- 1
- Frequency :
- 130MHz
- Voltage - Rated DC :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Length :
- 6.5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2005
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 100V
- Transition Frequency :
- 130MHz
- Max Breakdown Voltage :
- 80V
- JESD-609 Code :
- e3
- hFE Min :
- 25
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Pins :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 80V
- Pbfree Code :
- yes
- Current Rating :
- 1A
- Height :
- 1.63mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 1.5W
- Transistor Element Material :
- SILICON
- Datasheets
- BCP56T3G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP56T3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 130MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
BCP56T3G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
BCP56T3G Applications
There are a lot of ON Semiconductor
BCP56T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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